Semicon
Reticle Masking for EUV Lithography
Sioux co-developed a reticle masking module for EUV lithography, combining high-speed precision mechanics with demanding vacuum and cleanliness requirements.
The customer’s challenge
The customer needed a Reticle Masking (ReMa) module for High-NA EUV lithography equipment that could meet higher demands for speed, accuracy, and cleanliness. The module must precisely move four metal blades to mask light that must not reach the wafer, within the limited space of a vacuum environment.
Sioux’s contribution
Sioux developed the mechanical design, together with the customer, and built a functional model of subcomponents to address technical risks early. Working with the customer and external manufacturing partner, Sioux also contributed to assembly instructions and preparations for testing and validation.
Result
The collaboration delivered a high-speed masking system combining 32 g acceleration with 2 nm positioning accuracy in an ultra-clean vacuum environment at 10⁻¹⁰ Pa, supporting demanding lithography throughput requirements.
Technology
Precision Mechanical Design
High-Speed Blade Positioning
Functional Modelling of Subcomponents
Mechanical Integration in a Vacuum Environment